P0130AA ® 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT(RMS) 0.8 A G K VDRM/VRRM 100 V IGT 1 µA DESCRIPTION The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.D™ and of a resistor in electronic starter for fluores- cent tubelamps. TO-92 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tl = 55°C 0.8 A IT Average on-state current (180° conduction angle) (AV) Tl = 55°C 0.5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 8 Tj = 25°C A tp = 10 ms 7 I²t I²t Value for fusing tp = 10ms Tj = 25°C 0.24 A2S Critical rate of rise of on-state current dI/dt I = 2 x I , tr £ 100 ns F = 60 Hz Tj = 125°C 50 A/µs G GT IGM Peak gate current tp = 20 µs Tj = 125°C 1 A PG(AV) Average gate power dissipation Tj = 125°C 0.1 W Tstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 May 2002 - Ed: 2 1/5

P0130AA ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) P0130AA Unit Symbol Test Conditions I MIN. 0.1 GT µA V = 12 V R = 140 W MAX. 1 D L VGT MAX. 0.8 V VGD VD = VDRM RL = 3.3 kW RGK = 1 kW Tj = 125°C MIN. 0.1 V VRG IRG = 10 µA MIN. 8 V IH IT = 50 mA RGK = 1 kW MAX. 5 mA IL IG = 1 mA RGK = 1 kW MAX. 6 mA dV/dt VD = 67 % VDRM RGK = 1 kW Tj = 125°C MIN. 25 V/µs VTM ITM = 1.6 A tp = 380 µs Tj = 25°C MAX. 1.95 V Vt0 Threshold voltage Tj = 125°C MAX. 0.95 V Rd Dynamic resistance Tj = 125°C MAX. 600 mW IDRM VDRM = VRRM RGK = 1 kW Tj = 25°C MAX. 1 µA IRRM Tj = 125°C MAX. 100 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-i) Junction to case (DC) 80 °C/W Rth(j-a) Junction to ambient (DC) 150 °C/W PRODUCT SELECTOR Part Number Voltage Sensitivity Package P0130AA 100V 1 µA TO-92 2/5

P0130AA ORDERING INFORMATION P 01 30 A A 1EA3 Blank SENSITIVE SCR PACKING MODE: SERIES 1EA3:TO-92 bulk VOLTAGE: PACKAGE: 2AL3:TO-92 ammopack CURRENT:0.8A A:100V A:TO-92 SENSITIVITY: 30:1µA OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode P0130AA 1EA3 P0130AA 0.2 g 2500 Bulk P0130AA 2AL3 P0130AA 0.2 g 2000 Ammopack Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation Fig. 2-1: Average and D.C. on-state current versus average on-state current. versus lead temperature. P(W) IT(av)(A) 1.0 1.1 0.9 1.0 0.8 0.9 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 Tlead orTtab (°C) 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 25 50 75 100 125 Fig. 2-2: Average and D.C. on-state current Fig. 3: Relative variation of thermal impedance versus ambient temperature. junction to ambient versus pulse duration. IT(av)(A) K = [Zth(j-a)/Rth(j-a)] 1.2 1.00 1.1 1.0 0.9 0.8 0.7 0.6 0.10 0.5 0.4 0.3 0.2 0.1 Tamb(°C) tp(s) 0.0 0.01 0 25 50 75 100 125 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/5

P0130AA Fig. 4: Relative variation of gate trigger current, Fig. 5:Relative variation of holding current versus holding current and latching current versus gate-cathode resistance (typical values). junction temperature (typical values). IH[Rgk]/IH[Rgk=1kW ] IGT,IH,IL[Tj] / IGT,IH,IL[T] = 25°C 6 5 4 3 2 1 Tj(°C) Rgk(kW) 0 -40 -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity Fig. 7: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). versus gate-cathode capacitance (typical values). dV/dt[Rgk] / dV/dt[Rgk=1kW ] dV/dt[Cgk] / dV/dt[Rgk=1kW ] 10.0 10 8 6 1.0 4 2 Rgk(kW) Cgk(nF) 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 4 5 6 7 Fig. 8: Surge peak on-state current versus Fig. 9: Non-repetitive surge peak on-state number of cycles. current for a sinusoidal pulse with width tp<10ms, and corresponding value of I²t. ITSM(A) ITSM(A),I2t(A2s) 8 100.0 7 tp=10ms 6 Onecycle 10.0 5 Non repetitive Tj initial=25°C 4 3 Repetitive Tamb=25°C 1.0 2 1 Numberofcycles tp(ms) 0 0.1 1 10 100 1000 0.01 0.10 1.00 10.00 4/5

P0130AA Fig. 10: On-state characteristics (maximum values). ITM(A) 1E+1 W 1E+0 1E-1 VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS REF. Millimeters Inches A Min. Typ. Max. Min. Typ. Max. a A 1.35 0.053 B C B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 F D E E 12.70 0.500 F 3.70 0.146 a 0.50 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com 5/5